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Accurate explicit equations for the fill factor of real solar cells-Applications to thin-film solar cells

Identifieur interne : 001179 ( Main/Repository ); précédent : 001178; suivant : 001180

Accurate explicit equations for the fill factor of real solar cells-Applications to thin-film solar cells

Auteurs : RBID : Pascal:13-0341131

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English descriptors

Abstract

Even within the simplest real solar cell model, the exact value of the fill factor (FF) is only computable by numerical calculations. Here, we perform approximations to the power-voltage curve given by the one-diode model with series and shunt resistance losses, obtaining explicit expressions for the voltage and current at the maximum power point, and thus an explicit approach for the FF. Over a broad range of possible solar cell parameters, including cells where the impact of shunt losses on the fill factor is not negligible, the approximate equations yield relative errors typically around 1%. The equations are applied to explore the dependence of FF on alternative buffer material thickness of organic solar cells, and to investigate the incidence of shunt and series resistance losses on the FF of Cu(In,Ga)Se2 solar cells under indoor illumination conditions.

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Pascal:13-0341131

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<title xml:lang="en" level="a">Accurate explicit equations for the fill factor of real solar cells-Applications to thin-film solar cells</title>
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<name sortKey="Taretto, K" uniqKey="Taretto K">K. Taretto</name>
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<name sortKey="Troviano, M" uniqKey="Troviano M">M. Troviano</name>
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<term>Buffer system</term>
<term>Copper selenides</term>
<term>Diode</term>
<term>Electric power</term>
<term>Fill factor</term>
<term>Gallium selenides</term>
<term>Illumination</term>
<term>Incidence</term>
<term>Indium selenides</term>
<term>Indoor installation</term>
<term>Organic solar cells</term>
<term>Quaternary compound</term>
<term>Relative error</term>
<term>Series resistance</term>
<term>Shunt</term>
<term>Solar cell</term>
<term>Thickness</term>
<term>Thin film cell</term>
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<term>Facteur remplissage</term>
<term>Cellule solaire</term>
<term>Cellule couche mince</term>
<term>Diode</term>
<term>Résistance série</term>
<term>Shunt</term>
<term>Puissance électrique</term>
<term>Erreur relative</term>
<term>Système tampon</term>
<term>Epaisseur</term>
<term>Cellule solaire organique</term>
<term>Incidence</term>
<term>Installation intérieure</term>
<term>Eclairement</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Composé quaternaire</term>
<term>Cu(In,Ga)Se2</term>
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<div type="abstract" xml:lang="en">Even within the simplest real solar cell model, the exact value of the fill factor (FF) is only computable by numerical calculations. Here, we perform approximations to the power-voltage curve given by the one-diode model with series and shunt resistance losses, obtaining explicit expressions for the voltage and current at the maximum power point, and thus an explicit approach for the FF. Over a broad range of possible solar cell parameters, including cells where the impact of shunt losses on the fill factor is not negligible, the approximate equations yield relative errors typically around 1%. The equations are applied to explore the dependence of FF on alternative buffer material thickness of organic solar cells, and to investigate the incidence of shunt and series resistance losses on the FF of Cu(In,Ga)Se
<sub>2</sub>
solar cells under indoor illumination conditions.</div>
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<s0>Even within the simplest real solar cell model, the exact value of the fill factor (FF) is only computable by numerical calculations. Here, we perform approximations to the power-voltage curve given by the one-diode model with series and shunt resistance losses, obtaining explicit expressions for the voltage and current at the maximum power point, and thus an explicit approach for the FF. Over a broad range of possible solar cell parameters, including cells where the impact of shunt losses on the fill factor is not negligible, the approximate equations yield relative errors typically around 1%. The equations are applied to explore the dependence of FF on alternative buffer material thickness of organic solar cells, and to investigate the incidence of shunt and series resistance losses on the FF of Cu(In,Ga)Se
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<s0>Facteur remplissage</s0>
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<s0>Résistance série</s0>
<s5>05</s5>
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<s0>Series resistance</s0>
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<s0>Resistencia en serie</s0>
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<s0>Erreur relative</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG">
<s0>Relative error</s0>
<s5>08</s5>
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<s0>Error relativo</s0>
<s5>08</s5>
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<fC03 i1="09" i2="X" l="FRE">
<s0>Système tampon</s0>
<s5>09</s5>
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<s0>Buffer system</s0>
<s5>09</s5>
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<s0>Sistema amortiguador</s0>
<s5>09</s5>
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<s0>Epaisseur</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG">
<s0>Thickness</s0>
<s5>10</s5>
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<s0>Espesor</s0>
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<s0>Cellule solaire organique</s0>
<s5>11</s5>
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<s0>Organic solar cells</s0>
<s5>11</s5>
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<fC03 i1="12" i2="X" l="FRE">
<s0>Incidence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG">
<s0>Incidence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA">
<s0>Incidencia</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE">
<s0>Installation intérieure</s0>
<s5>13</s5>
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<s5>22</s5>
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<s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>23</s5>
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<s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>23</s5>
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<s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>24</s5>
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<s0>Indium selenides</s0>
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<s5>24</s5>
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<s5>25</s5>
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<s5>25</s5>
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<s0>Cu(In,Ga)Se2</s0>
<s4>INC</s4>
<s5>82</s5>
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<fN44 i1="01">
<s1>OTO</s1>
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<s1>OTO</s1>
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