Accurate explicit equations for the fill factor of real solar cells-Applications to thin-film solar cells
Identifieur interne : 001179 ( Main/Repository ); précédent : 001178; suivant : 001180Accurate explicit equations for the fill factor of real solar cells-Applications to thin-film solar cells
Auteurs : RBID : Pascal:13-0341131Descripteurs français
- Pascal (Inist)
- Facteur remplissage, Cellule solaire, Cellule couche mince, Diode, Résistance série, Shunt, Puissance électrique, Erreur relative, Système tampon, Epaisseur, Cellule solaire organique, Incidence, Installation intérieure, Eclairement, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Cu(In,Ga)Se2.
English descriptors
- KwdEn :
Abstract
Even within the simplest real solar cell model, the exact value of the fill factor (FF) is only computable by numerical calculations. Here, we perform approximations to the power-voltage curve given by the one-diode model with series and shunt resistance losses, obtaining explicit expressions for the voltage and current at the maximum power point, and thus an explicit approach for the FF. Over a broad range of possible solar cell parameters, including cells where the impact of shunt losses on the fill factor is not negligible, the approximate equations yield relative errors typically around 1%. The equations are applied to explore the dependence of FF on alternative buffer material thickness of organic solar cells, and to investigate the incidence of shunt and series resistance losses on the FF of Cu(In,Ga)Se2 solar cells under indoor illumination conditions.
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<author><name sortKey="Taretto, K" uniqKey="Taretto K">K. Taretto</name>
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<country>Argentine</country>
<wicri:noRegion>8300 Neuquén</wicri:noRegion>
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<author><name sortKey="Soldera, M" uniqKey="Soldera M">M. Soldera</name>
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<author><name sortKey="Troviano, M" uniqKey="Troviano M">M. Troviano</name>
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<s2>8300 Neuquén</s2>
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<title level="j" type="abbreviated">Prog. photovolt. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer system</term>
<term>Copper selenides</term>
<term>Diode</term>
<term>Electric power</term>
<term>Fill factor</term>
<term>Gallium selenides</term>
<term>Illumination</term>
<term>Incidence</term>
<term>Indium selenides</term>
<term>Indoor installation</term>
<term>Organic solar cells</term>
<term>Quaternary compound</term>
<term>Relative error</term>
<term>Series resistance</term>
<term>Shunt</term>
<term>Solar cell</term>
<term>Thickness</term>
<term>Thin film cell</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Facteur remplissage</term>
<term>Cellule solaire</term>
<term>Cellule couche mince</term>
<term>Diode</term>
<term>Résistance série</term>
<term>Shunt</term>
<term>Puissance électrique</term>
<term>Erreur relative</term>
<term>Système tampon</term>
<term>Epaisseur</term>
<term>Cellule solaire organique</term>
<term>Incidence</term>
<term>Installation intérieure</term>
<term>Eclairement</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Composé quaternaire</term>
<term>Cu(In,Ga)Se2</term>
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<front><div type="abstract" xml:lang="en">Even within the simplest real solar cell model, the exact value of the fill factor (FF) is only computable by numerical calculations. Here, we perform approximations to the power-voltage curve given by the one-diode model with series and shunt resistance losses, obtaining explicit expressions for the voltage and current at the maximum power point, and thus an explicit approach for the FF. Over a broad range of possible solar cell parameters, including cells where the impact of shunt losses on the fill factor is not negligible, the approximate equations yield relative errors typically around 1%. The equations are applied to explore the dependence of FF on alternative buffer material thickness of organic solar cells, and to investigate the incidence of shunt and series resistance losses on the FF of Cu(In,Ga)Se<sub>2</sub>
solar cells under indoor illumination conditions.</div>
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<fA11 i1="01" i2="1"><s1>TARETTO (K.)</s1>
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<fA11 i1="02" i2="1"><s1>SOLDERA (M.)</s1>
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<fA11 i1="03" i2="1"><s1>TROVIANO (M.)</s1>
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<fA14 i1="01"><s1>Dto. de Electrotecnia, Univ. Nacional del Comahue-CONICET, Buenos Aires 1400</s1>
<s2>8300 Neuquén</s2>
<s3>ARG</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Even within the simplest real solar cell model, the exact value of the fill factor (FF) is only computable by numerical calculations. Here, we perform approximations to the power-voltage curve given by the one-diode model with series and shunt resistance losses, obtaining explicit expressions for the voltage and current at the maximum power point, and thus an explicit approach for the FF. Over a broad range of possible solar cell parameters, including cells where the impact of shunt losses on the fill factor is not negligible, the approximate equations yield relative errors typically around 1%. The equations are applied to explore the dependence of FF on alternative buffer material thickness of organic solar cells, and to investigate the incidence of shunt and series resistance losses on the FF of Cu(In,Ga)Se<sub>2</sub>
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<fC03 i1="01" i2="3" l="FRE"><s0>Facteur remplissage</s0>
<s5>01</s5>
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<s5>01</s5>
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<fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>02</s5>
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<s5>02</s5>
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<fC03 i1="03" i2="X" l="FRE"><s0>Cellule couche mince</s0>
<s5>03</s5>
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<fC03 i1="03" i2="X" l="ENG"><s0>Thin film cell</s0>
<s5>03</s5>
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<fC03 i1="03" i2="X" l="SPA"><s0>Célula capa delgada</s0>
<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="SPA"><s0>Diodo</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Résistance série</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Series resistance</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Resistencia en serie</s0>
<s5>05</s5>
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<fC03 i1="06" i2="X" l="FRE"><s0>Shunt</s0>
<s5>06</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Shunt</s0>
<s5>06</s5>
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<s5>06</s5>
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<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>Relative error</s0>
<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="10" i2="X" l="FRE"><s0>Epaisseur</s0>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Thickness</s0>
<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<fC03 i1="12" i2="X" l="FRE"><s0>Incidence</s0>
<s5>12</s5>
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<fC03 i1="12" i2="X" l="ENG"><s0>Incidence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Incidencia</s0>
<s5>12</s5>
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<fC03 i1="13" i2="X" l="FRE"><s0>Installation intérieure</s0>
<s5>13</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s2>NK</s2>
<s5>23</s5>
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<s2>NK</s2>
<s5>23</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>24</s5>
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<fC03 i1="17" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>24</s5>
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<fC03 i1="18" i2="X" l="FRE"><s0>Composé quaternaire</s0>
<s5>25</s5>
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<s5>25</s5>
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<s5>25</s5>
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<fC03 i1="19" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0>
<s4>INC</s4>
<s5>82</s5>
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